An epitaxially-grown charge modulation device

IEEE Transactions on Electron Devices

Volumn 44, Issue 10, 1997, Pages 1672-1678

  Reich, Robert K ^a   Mountain, Robert W ^a   Robinson, McDonald ^a   McGonagle, William H ^a   Loomis, Andrew H ^a   Kosicki, Bernard B ^a   Savoye, Eugene D ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; FIELD EFFECT SEMICONDUCTOR DEVICES; IMAGE SENSORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SIGNAL TO NOISE RATIO;

CHARGE MODULATION DEVICES;

CHARGE COUPLED DEVICES;

EID: 0031251537     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.628822     Document Type: Article

References (18)

1. M. H. Crowell T. M. Buck E. F. Labuda J. V. Dalton and E. J. Walsh A camera tube with a silicon diode array target Bell Syst. Tech. J. vol. 48 pp. 1481-1528 1967.
2. Y. Ishihara and K. Tanigaki A high photosensitivity IL-CCD image sensor with monolithic resin lens array in IEDM Tech. Dig. 1983 pp. 497-500.
3. N. Harada S. Uya Y. Endo T. Adachi O. Yoshida K. Ide and K. Yano A high-resolution staggered-configuration CCD imager overlaid with an a-Si:H photoconversion layer IEEE Trans. Electron Devices vol. ED-32 pp. 1499-1504 Aug. 1985.
4. T. Chikamura T. Komeda D. Ishiko M. Yoshino M. Nakayama K. Yano Y. Aoki A. Ueno T. Yamada and T. Ishihara A 1/2-in CCD image sensor overlaid with a hydrogenated amorphous silicon IEEE Trans. Electron Devices vol. ED-32 pp. 1495-1498 Aug. 1985.
5. R. J. Brewer Low-noise CCD output amplifier in IEDM Tech. Dig. 1978 pp. 610-612.
6. J. Kemmer G. Lutz U. Prechtel K. Schuster M. Sterzik L. Struder and T. Ziemann Experimental confirmation of a new semiconductor detector principle Nucl. Instrum. Methods A vol. 228 pp. 92-98 1990.
7. N. Tanaka T. Ohmi and Y. Nakamura A novel bipolar imaging device with self-noise reduction capability IEEE Trans. Electron Devices vol. 36 pp. 31-38 Jan. 1989.
8. Y. Matsunaga S. Oosawa M. Iesaka S. Manabe N. Harada and N. Suzuki A high-sensitivity output amplifier for CCD image sensors in IEDM Tech. Dig. 1987 pp. 116-118.
9. J. Hynecek A new device architecture suitable for high-resolution and high-performance image sensors IEEE Trans. Electron Devices vol. 35 pp. 646-652 May 1988.
10. T. Nakamura K. Matsumoto R. Hyuga and A. Yusa A new MOS image sensor operating in a nondestructive readout mode in IEDM Tech. Dig. 1986 pp. 353-356.
11. N. Mutoh N. Morimoto M. Nishimura N. Teranishi and E. Oda New low-noise output amplifier for high-definition CCD image sensors in IEDM Tech. Dig. 1989 pp. 173-176.
12. E. Roks P. G. Centen L. Sankaranarayanan J. T. Bosiers and W. F. Huinink A bipolar floating-base detector (FBD) for CCD image sensors in IEDM Tech. Dig. 1992 pp. 109-112.
13. C. M. Huang B. E. Burke B. B. Kosicki R. W. Mountain P. J. Daniels D. C. Harrison G. A. Lincoln N. Usiak M. A. Kaplan and A. R. Forte A new process for thinned back-illuminated CCD imager devices in Proc. 1989 IEEE Int. Symp. VLSI Technol. Syst. and Applicat. New York 1989 pp. 98-101.
14. T. B. Stellwag J. A. Cooper Jr. and M. R. Melloch A vertically integrated GaAs bipolar dynamic RAM cell with storage times of 4.5 h at room temperature IEEE Electron Device Lett. vol. 13 pp. 129-131 Feb. 1992.
15. D. L. Hetherington J. F. Klem and H. T. Weaver A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing IEEE Electron Device Lett. vol. 13 pp. 146-148 Mar. 1992.
16. S. Ohsawa and Y. Matsunnaga Analysis of low signal level characteristics for high-sensitivity CCD charge detector IEEE Trans. Electron Devices vol. 39 pp. 1465-1468 June 1992.
17. K. Kandiah Random telegraph signal currents and low-frequency noise in junction field effect transistors IEEE Trans. Electron Devices vol. 41 pp. 2006-2015 Nov. 1994.
18. L. D. Yau A simple theory to predict the threshold voltage of short-channel IGFET's Solid-State Electron. vol. 17 pp. 1059-1063 1974.