Analysis Of Low Signal Level Characteristics For High-Sensitivity Ccd Charge Detector

IEEE Transactions on Electron Devices

Volumn 39, Issue 6, 1992, Pages 1465-1468

  Ohsawa, Shinji ^a   Matsunaga, Yoshiyuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008787414     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.137327     Document Type: Article

References (8)

1. R. J. Brewer, “A low noise CCD output amplifier,” in IEDM Tech. Dig., 1979, pp. 610–612.
2. R. J. Brewer, “The low light level potential of a CCD imaging array,” IEEE Trans. Electron Devices, vol. ED-27, 401–405, 1980.
3. J. Hynecek, “High-resolution 8-mm CCD image sensor with correlated clamp sample and hold charge detection circuit,” IEEE Trans. Electron Devices, vol. ED-33, no. 6, pp. 850–862, 1986.
4. Y. Matsunaga, “A high sensitivity output amplifier for CCD image sensor,” in IEDM Tech. Dig., 1987, pp. 116–119.
5. S. Ohsawa, “An electron counting detector for CCD image sensors,” in SSDM Dig. Tech. Papers, 1988, pp. 355–358.
6. Y. Matsunaga, “A two-dimensional CCD optical detector with a highly sensitive floating surface amplifier, ” in APCTDig. Tech. Papers, 1989, pp. 195–198.
7. Y. Matsunaga, “A highly sensitive on-chip charge detector for CCD area image sensor,” IEEE J. Solied-State Circuits, vol. 26, no. 4, 1991.
8. T. Wada, “Development and application of a high-speed 2-dimensional time dependent device simulator (MOS2C),” in Proc. NASE-CODEIV, 1985, pp. 92–119.