Random Telegraph Signal Currents and Low-Frequency Noise in Junction Field Effect Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2006-2015

  Kandiah, K ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; FORECASTING; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISE; RANDOM TELEGRAPH SIGNAL CURRENTS; TRAPS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0028547755     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333818     Document Type: Article

References (33)

1. A. van der Ziel, “Carrier density fluctuations in field-effect transistors,” Proc. IEEE, vol. 51, p. 1670, 1963.
2. C. T. Sah, “Theory of low-frequency generation noise in junction-gate field-effect transistors,” Proc. IEEE, vol. 52, p. 795, 1964.
3. P. O. Lauritzen, “Low-frequency generation noise in junction field effect transistors,” Solid-State Electron., vol. 8, p. 41, 1965.
4. F. N. Hooge, “1/f noise is no surface effect,” Phys. Lett., vol. A-29, p. 139, 1969.
5. A. van der Ziel, “Unified presentation of 1/f noise in electronic devices: Fundamental 1/f noise sources,” Proc. IEEE, vol. 76, p. 233, 1988.
6. K. H. Duh and A. van der Ziel, “Hooge parameters for various FET structures,” IEEE Trans. Electron Devices, vol. ED-32, p. 662, 1985.
7. D. A. Bell, Electrical Noise. Princeton, NJ: Van Nostrand, 1960, p. 258.
8. W. H. Card and P. K. Chaudhari, “Characteristics of burst noise,” Proc. IEEE, vol. 53, p. 652, 1965.
9. D. Wolf and E. Holler, “Bistable current fluctuations in reverse-biased p-n junctions of germanium,” J. Appl. Phys., vol. 38, no. 1, p. 189, 1967.
10. G. Giralt, J. C. Martin, and F. X. Mateu-Perez, “Burst noise of silicon transistors,” Electron. Lett., vol. 2, no. 6, 228, 1966.
11. G. Blasquez, “Contribution a l’etude du bruit de fond des transistors a jonctions et notamment des bruits en ' ‘1/f’ et ' ‘en creneaux,’” Ph.D. dissertation, No. 532, University of Toulouse, 1973.
12. K. F. Knott, “Characteristics of burst noise intermittency,” Solid-State Electron., vol. 21, p. 1039, 1978.
13. K. Kandiah and F. B. Whiting, “Low frequency noise in junction field effect transistors,” Solid-State Electron., vol. 21, p. 1079, 1978.
14. K. Kandiah, M. O. Deighton, and F. B. Whiting, “The characteristics of noise due to individual defects in JFETs,” in Proc. 6th Int. Conf. on Noise in Physical Systems. NBS Publication 614, U.S. Dept. of Commerce, Washington, DC, 1981, 75.
15. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, “Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low frequency (1/f) noise,” Phys. Rev. Lett., vol. 52, 228, 1984.
16. M. J. Uren, D. J. Day, and M. J. kirton, “1/f and random telegraph signal noise in silicon metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 47, p. 1195, 1985.
17. M. J. Kirton and M. J. Uren, “Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise,” in Advances in Physics, vol. 38, 1989, p. 367.
18. A. L. McWhorter, “1/f noise and germanium surface properties,” in Semiconductor Surface Physics, Philadelphia: Univ. Pennsylvania Press, 1957, p. 207.
19. K. Kandiah, M. O. Deighton, and F. B. Whiting, “A physical model for random telegraph signal currents in semiconductor devices,” J. Appl. Phys., vol. 66, no. 2, p. 937, 1989.
20. S. Ramo,” Currents induced by electron motion,” Proc. IRE, vol. 24, p. 584, 1939.
21. V. Radeka, “FET noise as a function of temperature and frequency,” in Semiconductor Nuclear Particle Detectors and Circuits, National Academy of Sciences, publ. 1593, Washington, DC, 1969.
22. F. M. Klassen and J. R. Robinson, “Anomalous noise behavior of the junction-gate field-effect transistor at low temperatures,” IEEE Trans. Electron Devices, vol. ED-17, 852, 1970.
23. J. W. Haslett and E. J. M. Kendall, “Temperature dependence of low-frequency excess noise in junction-gate FETs,” IEEE Trans. Electron Devices, vol. ED-19, p. 943, 1972.
24. J. W. Haslett, E. J. M. Kendall, and F. J. Scholz, “Design considerations for improving low-temperature noise performance of silicon JFETs,” Solid-State Electron., vol. 18, p. 199, 1975.
25. K. Kandiah, “Low frequency noise mechanisms in field effect transistors,” in Noise in Physical Systems and 1/f Noise 1985. Amsterdam: 1986, 19.
26. K. Kandiah and F. B. Whiting, “Nonideal behaviour of buried channel CCDs caused by oxide and bulk silicon traps,” Nucl. Instr. and Meth., vol. A305, p. 600, 1991.
27. F. Stem and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, 816, 1967.
28. M. O. Deighton, Private communication.
29. S. Machlup, “Noise in semiconductors: Spectrum of a two-parameter random signal,” J. Appl. Phys. vol. 25, p. 341, 1954.
30. M. J. Churchill and P. O. Lauritzen, “Carrier density fluctuation noise in silicon junction field effect transistors at low temperatures,” Solid-State Electron., vol. 14, p. 985, 1971.
31. M. O. Deighton, “Carrier concentration profiles across the channel of a JFET,” AERE-R11410, A.E.R.E., Harwell, U.K., 1984.
32. C. F. Hiatt, A. van der Zieland, and K. M. van Vliet, “Generation recombination noise produced in the channel of JFET's,” ZEEE nuns. Electron Devices, vol. ED-22, 1975.
33. M. O. Deighton, private communication.