A GaAs Memory Device Utilizing a Buried JFET Channel for Nondestructive Charge Sensing

IEEE Electron Device Letters

Volumn 13, Issue 3, 1992, Pages 146-148

  Hetherington, D L ^a   Klem, John F ^b   Weaver, Harry T ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; TRANSISTORS, FIELD EFFECT--APPLICATIONS;

BURIED JFET CHANNEL; ELECTRIC WRITE/ERASE TECHNIQUES; NONDESTRUCTIVE CHARGE SENSING; P-I-N-I-P EPITAXIAL STRUCTURE; STORAGE CAPACITORS;

DATA STORAGE, DIGITAL;

EID: 0026835070     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144992     Document Type: Article

References (12)

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