A simple theory to predict the threshold voltage of short-channel IGFET's

Solid State Electronics

Volumn 17, Issue 10, 1974, Pages 1059-1063

  Yau, L D ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016113965     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90145-2     Document Type: Article

References (7)

1. A simple theory for threshold voltage modulation in IGFETs
2. ECS Semiconductor Silicon
3. The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors