Continuous-wave operation up to 36°C of 1.3-μm GaInAsP/InP strained-layer multi-quantum-wells surface-emitting laser

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 1996, Pages 11-

  Uchiyama, S ^a   Yokouchi, N ^a   Ninomiya, T ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HETEROJUNCTIONS; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; THERMAL CONDUCTIVITY;

CONTINUOUS WAVE OPERATION; ION ASSISTED DEPOSITION; OPTICAL THICKNESS MONITOR; STRAINED LAYER MULTI QUANTUM WELLS; SURFACE EMITTING LASER; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0029745934     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)