A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1172-1173

  Hareland, S A ^a   Jallepalli, S ^a   Chindalore, G ^a   Shih, W K ^a   Tasch, A F ^a   Maziar, C M ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM THEORY;

ELECTRON INVERSION LAYERS; SCHRODINGER-POISSON SOLVER;

MOSFET DEVICES;

EID: 0031176685     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595947     Document Type: Article

References (11)

1. F. Stern, "Self-consistent results for n-type Si inversion layers," Phys. Rev. B, vol. 5, no. 12, pp. 4891899, June 15, 1972.
2. W. Mansch, T. Vogelsang, R. Kircher, and M. Orlowski, "Carrier transport near the Si/SiO2 interface of a MOSFET," Solid-State Electron. , vol. 32, no. 10, pp. 839-849, 1989.
3. Y. Ohkura, "Quantum effects in Si n-MOS inversion layer at high substrate concentration," Solid-State Electron. , vol. 33, no. 12, pp. 1581-1585, 1990.
4. M. J. van Dort, P. H. Woerlee, and A. J. Walker, "A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions," Solid-State Electron. , vol. 37, no. 3, 1994.
5. S. A. Hareland, S. Krishnamurthy, S. Jallepalli, A. F. Tasch, Jr. , and C. M. Maziar, "A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 90-96, Jan. 1996.
6. R. Rios and N. D. Arora, "Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects," in IEDM Tech. Dig. , 1994, pp. 613-616.
7. C. Moglestue, "Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfaces," J. Appl. Phys. , vol. 59, no. 5, 1986.
8. C. -Y. Hu, S. Banerjee, K. Sadra, B. G. Streetman, and R. Sivan, "Quantization effects in inversion layers of PMOSFET's on Si (100) substrates," IEEE Electron Device Lett. , vol. 17, pp. 276-278, June 1996.
9. S. Jallepalli, J. Bude, W. -K. Shih, M. R. Pinto, C. M. Maziar, and A. F. Tasch, Jr. , "Effects of quantization on the electrical characteristics of deep submicron p- and n-MOSFET's," in VLSI Symp. , 1996, pp. 138-139.
10. G. Chindalore, S. Hareland, S. Jallepalli, A. F. Tasch, Jr. , C. M. Maziar, V. K. F. Chia, and S. P. Smith, "Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers," in Proc. IEEE 1997 Int. Conf. Microelectronic Test Structures, Monterey, CA, Mar. 17-20, 1997, pp. 165-168.
11. G. Chindalore, S. A. Hareland, S. Jallepalli, A. F. Tasch, Jr. , C. M. Maziar, V. K. F. Chia, and S. Smith, "Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers," IEEE Electron Device Lett. , vol. 18, pp. 206-208, May 1997.