Photonic crystals and microdisk cavities based on GaInAsP-InP system

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 808-830

  Baba, Toshihiko ^a,b,c,d  

^a IEEE   (Japan)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

GaInAsP InP; Microcavity; Microdisk; Photonic crystals; Semiconductor laser; Spontaneous emission control

Indexed keywords

CRYSTALS; ENERGY GAP; LIGHT POLARIZATION; LIGHT TRANSMISSION; OPTICAL VARIABLES CONTROL; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MICRODISK CAVITIES; PHOTONIC CRYSTALS; SPONTANEOUS EMISSION CONTROL;

SEMICONDUCTOR LASERS;

EID: 0031153804     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640635     Document Type: Article

References (96)

1. E. M. Purcell, "Sponlaneous emission probabilities at radio frequencies," Phys. Rev., vol. 69, p. 681, 1946.
2. E. T. Jaynes and F. W. Comings, "Comparison of quantum and semiclassical radiation theories with application to the beam maser," Proc. IEEE, vol. 51, pp. 89-109, 1963.
3. K. H. Drexhage, "Interaction of light with monomolecular dye layers," Progress in Optics E. Wolf, Ed. New York: North-Holland, 1974, vol. 12, pp. 165-232.
4. P. Goy, J. M. Raimond, M. Gross, and S. Haroche, "Observation of cavity-enhanced single-atom spontaneous emission," Phys. Rev. Lett., vol. 50, pp. 1903-1909, 1983.
5. R. G. Hulet, E. S. Hilfer, and D. Kleppner, "Inhibited spontaneous emission by Rydberg atom," Phys. Rev. Lett., vol. 55, pp. 2137-2140, 1985.
6. T. Kobayashi, T. Segawa, Y. Morimoto, and T. Sueta, "Novel-type lasers, emitting devices, and functional optical devices by controlling spontaneous emission," in 46th Fall Meet. Jpn Soc. of Applied Physics, 1982, no. 29a-B-6 (in Japanese).
7. E. Yablonovitch, "Inhibited spontaneous emission in solid-state physics and electronics," Phys. Rev. Lett., vol. 58, pp. 2059-2062, 1987.
8. E. Yablonovitch, T. J. Gmitter, R. D. Meade, A. M. Rappe, K. D. Brommer, and J. D. Joannopoulos, "Donor and acceptor modes in photonic band structure," Phys. Rev. Lett., vol. 67, pp. 3380-3383, 1991.
9. S. John, "Strong localization of photons in certain disordered dielectric superlattices," Phys. Rev. Lett., vol. 58, pp. 2486-2489, 1987.
10. F. De Martini, G. Innocenti, G. R. Jacobovitz, and P. Mataloni, "Anomalous spontaneous emission time in a microscopic optical cavity," Phys. Rev. Lett., vol. 59, pp. 2955-2958, 1987.
11. F. De Martini and G. R. Jacobovitz, "Anomalous spontaneous-stimulated-decay phase transition and zero-threshold laser action in a microscopic cavity," Phys. Rev. Lett., vol. 60, pp. 1711-1714, 1988.
12. K. Iga, F. Koyama, and S. Kinoshita, "Surface emitting semiconductor lasers," IEEE J. Quantum Electron., vol. 24, pp. 1845-1855, 1988.
13. F. Koyama, S. Kinoshita, and K. Iga, "Room-temperature CW operation of GaAs vertical cavity surface emitting laser," Trans. IEICE., vol. E7, pp. 1089-1090, 1988.
14. J. L. Jewell, A. Scherer, S. L. McCall, Y. H. Lee, S. J. Walker, J. P. Harbison, and L. T. Florez, "Low-threshold electrically pumped vertical-cavity surface emitting microlasers," Electron. Lett., vol. 25, pp. 1123-1124, 1989.
15. Y. Yamamoto, S. Machida, K. Igeta, and Y. Horikoshi, "Enhanced and inhibited spontaneous emission of free excitons in GaAs quantum wells in a micro-cavity," Proc. 6th Rochester Conf. Quantum Opt., 1987.
16. Y. Yamamoto, S. Machida, K. Igeta, and G. Björk, "Controlled spontaneous emission in microcavity semiconductor lasers," in Coherence, Amprification and quantum effects in semiconductor lasers Y. Yamamoto, Ed. New York: Wiley, 1991.
17. H. Yokoyama and S. D. Brorson, "Rate equation analysis of microcavity lasers," J. Appl. Phys., vol. 66, pp. 4801-4805, 1989.
18. G. Björk and Y. Yamamoto, "Analysis of semiconductor microcavity lasers using rate equations," IEEE J. Quantum Electron., vol. 27, pp. 2386-2396, 1991.
19. M. Yamanishi, Y. Yamamoto, and T. Shiotani, "A novel modulation scheme in semiconductor light emitters with quantum microcavities: High speed intensity modulation by switching of coupling efficiency of spontaneous emission," IEEE Photon. Technol. Lett., vol. 3, pp. 888-890, 1991.
20. G. P. Agrawal and G. R. Gray, "Intensity and phase noise in microcavity surface-emitting semiconductor laser," Appl. Phys. Lett., vol. 59, pp. 399-401, 1991.
21. X. P. Feng and K. Ujihara, "Quantum theory of spontaneous emission in a one-dimensional optical cavity with two-side output coupling," Phys. Rev. A, vol. 41, pp. 266-2676, 1990.
22. T. Baba, T. Hamano, F. Koyama, and K. Iga, "Spontaneous emission factor of a microcavity DBR surface emitting laser," IEEE J. Quantum Electron., vol. 27, pp. 1347-1358, 1991.
23. _, "Spontaneous emission factor of a microcavity DBR surface emitting laser (II)-Effect of electron quantum confinements," IEEE J. Quantum Electron., vol. 28, pp. 1310-1319, 1992.
24. T. Numai, K. Kurihara, I. Ogura, H. Kosaka, M. Sugimoto, and K. Kasahara, "Effect of sidewall reflector on current versus light output in a pnpn vertical-to-surface transmission electrophotonic device with a vertical cavity," IEEE J. Quantum Electron., vol. 29, pp. 2006-2012, 1993.
25. T. Tamanuki, F. Koyama, and K. Iga, "Threshold and modulation characteristics of photon-recycled semiconductor lasers," Jpn. J. Appl. Phys., vol. 31, pp. 1810-1811, 1992.
26. T. Baba, R. Watanabe, K. Asano, F. Koyama, and K. Iga, "Theoretical and experimental estimations of pho-ton recycling effect in light emitting devices with a metal mirror," Jpn. J. Appl. Phys., vol. 35, pp. 97-100, 1996.
27. H. Yokoyama, K. Nishi, T. Anan, H. Yamada, S. D. Brorson, and E. P. Ippen, "Enhanced spontaneous emission from GaAs quantum wells with monolithic optical microcavities," Appl. Phys. Lett., vol. 57, pp. 2814-2816, 1990.
28. T. J. Rogers, D. G. Deppe and B. G. Streetman, "Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well," Appl. Phys. Lett., vol. 57, pp. 1858-1860, 1990.
29. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, "Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity," Phys. Rev. Lett., vol. 69, pp. 3314-3317, 1992.
30. A. Scherer, J.L. Jewell, and J.P. Harbison, "Lasing in sub-micron wide vertical cavity microlasers," Opt. Photon. News, vol. 2, p. 9, 1991.
31. A. F. J. Levi, R. E. Slusher, S. L. McCall, T. Tanbun-Ek, D. L. Coblentz, and S. J. Pearton, "Room temperature operation of microdisk lasers with submilliamp threshold current," Electron. Lett., vol. 28, pp. 1010-1012, 1992.
32. 0.8As microcylinder laser diodes," Appl. Phys. Lett., vol. 62, pp. 2021-2023, 1993.
33. P. L. Gourley, J. R. Wendt, G. A. Vawter, T. M. Brennan, and B. E. Hammons, "Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors," Appl. Phys. Lett., vol. 64, pp. 687-689, 1994.
34. T. Krauss, Y. P. Song, S. Thorns, C. D. W. Wilkinson, and R. M. DelaRue, "Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs," Electron. Lett., vol. 30, pp. 1444-1446, 1994.
35. T. Baba and T. Matsuzaki, "Polarization change in spontaneous emission from GaInAsP/InP 2-dimensional photonic crystals," Electron. Lett., vol. 31, pp. 1776-1778, 1995.
36. C. C. Cheng, A. Scherer, V. A. Engels and E. Yablonovitch, "Lithographic band gap tuning in photonic band gap crystals," J. Vac. Sci. Technol. B, vol. 14, pp. 4110-4114, 1996.
37. H. Yokoyama and K. Ujihara, Eds., Spontaneous Emission and Laser Oscillation in Microcavities. New York: CRC, 1995.
38. K. Asakawa and S. Sugata, "GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching system," J. Vac. Sci. Technol. B, vol. 3, pp. 402-405, 1988.
39. A. Scherer, J. L. Jewell, Y. H. Lee, J. P. Harbison, and L. T. Florez, "Fabrication of microlasers and microresonator optical switches," Appl. Phys. Lett., vol. 55, pp. 2724-2726, 1989.
40. E. Yablonovitch, T. J. Gmitter and R. Bhat, "Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures," Phys. Rev. Lett., vol. 61, pp. 2546-2549, 1988
41. Y. Suematsu and K. Furuya, "Theoretical spontaneous emission factor of injection lasers," Trans. IEICE Jpn., vol. 60, pp. 467-472, 1977.
42. F. Stern and J. M. Woodall, "Photon recycling in semiconductor lasers," J. Appl. Phys., vol. 45, pp. 3904-3906, 1974.
43. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room temperature continuous wave lasing characteristics of GalnAsP/InP surface emitting laser," Electron. Lett., vol. 29, pp. 913-914, 1993.
44. S. Uchiyama and S. Kashiwa, "GaInAsP/InP square buried-heterostructure surface-emitting lasers regrown by MOCVD," IEICE Trans. Electron., vol. E78C, pp. 1311-1313, 1995.
45. S. Uchiyama, N. Yokouchi and T. Ninomiya, "Continuous-wave operation up to 36 °C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 141-142, 1997.
46. J. J. Dudley, M. Ishikawa, D. I. Babic, B. I. Miller, R. Mirin, W. B. Jiang, J. E. Bowers, and E. L. Hu, "144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates," Appl. Phys. Lett., vol. 61, pp. 3095-3097, 1992.
47. N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, R. L. Naone, J. E. Bowers, and E. L. Hu, "Submilliamp long wavelength vertical cavity lasers," Electron. Lett., vol. 32, pp. 1675-1676, 1996.
48. K. Streubel, S. Rapp, J. André, and N. Chitica, "1.26 μm vertical cavity laser with two InP/air-gap reflectors," Electron. Lett., vol. 32, pp. 1369-1370, 1996.
49. T. Baba, M. Hamasaki, N. Watanabe, P. Kaewplung, A. Matsutani, T. Mukaihara, F. Koyama, and K. Iga, "A novel short cavity laser with deep grating distributed Bragg reflectors," Jpn. J. Appl. Phys., vol. 35, pp. 1390-1394, 1996.
50. J. O'Brien, O. Painter, R. Lee, C. C. Cheng, A. Yariv, and A. Scherer, "Lasers incorporating 2D photonic bandgap mirrors," Electron. Lett., vol. 32, pp. 2243-2244, 1997.
51. T. Baba and M. Koma, "Possibility of InP-based 2-dimensional photonic crystal - An approach by anodization technique," Jpn. J. Appl. Phys., vol. 34, pp. 1405-1408, 1995.
52. T. Baba, N. Kamizawa, and M. Ikeda, "Nanofabrication process of GaInAsP/InP 2D photonic crystals by a methane-based reactive ion beam etching technique," Physica B, vol. 227, pp. 415-418, 1996.
53. T. Hamano, H. Hirayama, and Y. Aoyagi, "Observation of photonic bandgap in GaAs 2D crystal fabricated by selective growth," in Proc. Topical Meet. Quantum Optoelectronics, 1997, vol. 9, pp. 29-31.
54. S. Noda, N. Yamamoto, and A. Sasaki, "New realization method for three-dimensional photonic crystal in optical wavelength region," Jpn. J. Appl. Phys., vol. 35, pp. L909-L912, 1996.
55. S. Mitsugi, F. Koyama J. Kato, A. Matsutani, T. Mukaihara, and K. Iga, "GaInAs/GaAs micro-arc ring semiconductor laser," Jpn. J. Appl. Phys., vol. 34, pp. 1265-1269, 1995.
56. S. Ando, N. Kobayashi, and H. Ando, "Novel hexagonal-facet GaAs/AlGaAs laser grown by selective area metalorganic chemical vapor deposition," Jpn. J. App. Phys., vol. 32, pp. L1293-L1296, 1993.
57. J. P. Zhang, D. Y. Chu, S. L. Wu, S. T. Ho, W. G. Bi, C. W. Tu, and R. C. Tiberio, "Photonic-wire laser," Phys. Rev. Lett., vol. 75, pp. 2678-2681, 1995.
58. T. Baba, M. Fujita, A. Sakai, M. Kihara, and R. Watanabe, "Lasing characteristics of GaInAsP/InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm," IEEE Photon. Technol. Lett., vol. 9, pp. 878-880, 1997.
59. x-passivation in metalorganic chemical vapor deposition regrown GaAlAs/GaAs buried heterostructure lasers and estimation of threshold currents in microcavity surface emitting lasers," Jpn. J. Appl. Phys., vol. 31, pp. 3292-3295, 1992.
60. T. Tezuka, S. Nunoue, H. Yoshida, and T. Noda, "Spontaneous emission enhancement in pillar-type microcavities," Jpn. J. Appl. Phys., vol. 32, pp. L54-L57, 1993.
61. B. E. Maile, A. Forchel and R. Germann, "Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires," Appl. Phys. Lett., vol. 54, pp. 1552-1554, 1989.
62. 2 containing gases," J. Vac. Sci. Technol., vol. 19, pp. 225-229, 1981.
63. T. Tadokoro, F. Koyama, and K. Iga, "Classification of etching mechanism in reactive ion beam etch," J. Vac. Sci. Technol. B, vol. 7, pp. 1111-1114, 1989.
64. A. Matsutani, F. Koyama, and K. Iga, "Characterization of sidewall damage induced by reactive ion-beam etching," Jpn. J. Appl. Phys., vol. 31, pp. 1541-1544, 1992.
65. 2/Ar electron cyclotron resonance discharges," J. Vac. Sci. Technol. B, vol. 8, pp. 596-606, 1990.
66. 2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-base III-V alloys," J. Vac. Sci. Technol. B, vol. 9, pp. 1421-1432, 1991.
67. L. A. Coldren, K. Furuya, B. I. Miller, and J. A. Rentschler, "Combined dry and wet etching techniquess to form planar (011) facets in GaInAsP/InP double heterostructures," Electron. Lett., vol. 18, pp. 235-237, 1982
68. K. Furuya, L. A. Coldren, B. I. Miller, and J. A. Rentschler, "Crystallographic facets chemically etched in GaInAsP/InP for integrated optics," Electron. Lett., vol. 17, pp. 582-583, 1981.
69. K. Iga and B. I. Miller, "Chemically etched-mirror GaInAsP/InP lasers - Review," IEEE J. Quantum Electron., vol. QE-18, pp. 22-29, 1982
70. T. Takizawa, S. Arai, and M. Nakahara, "Fabrication of vertical and uniform-size porous InP structure by electrochemical anodization," Jpn. J. Appl. Phys., vol. 33, L643-L645, 1994.
71. Z. Knittl, "Optics of thin films," An Optical Multilayer Theory. New York: Wiley-Interscience, 1976.
72. A. Matsutani, F. Koyama, and K. Iga, "Three-dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion beam etching," Appl. Phys. Lett., vol. 66, pp. 64-66, 1995.
73. C. K. Carniglia, "Scalar scattering theory for multilayer optical coatings," Opt. Eng., vol. 18, pp. 104-114, 1979.
74. M. Cantagrel, "Comparison of the properties of different materials used as masks for ion-beam etching," J. Vac. Sci. Technol, vol. 12, pp. 1340-1343, 1975.
75. J. D. Joannopoulos, R. D. Meade, and J. N. Winn, Photonic Crystals. Princeton, NJ: Princeton Univ. Press, 1995.
76. C. M. Bowden and J. P. Dowling, Eds., "Development and applications of materials exhibiting photonic band gaps," J. Opt. Soc. Amer. B, vol. 10-2, pp. 283-413, 1993.
77. C. M. Soukoulis, Ed., Photonic Band Gap Materials. Dordrecht, The Netherlands: Kluwer Academic, 1996.
78. J. Rarity and C. Weisbuch, Eds.,Microcavities and Photonic Bandgaps: Physics and Applications. Dordrecht, The Netherlands: Kluwer Academic, 1996.
79. R. Biswas, C. T. Chan, M. Sigalas, C. M. Soukoulis, and K. M. Ho, "Photonic band gap materials," Photonic Band Gap Materials, C. M. Soukoulis, Ed. Dordrecht, The Netherlands: Kluwer Academic, 1996, pp. 23-40.
80. K. M. Leung and Y. F. Liu, "Full vector wave calculation of photonic band structures in face-centered-cubic dielectric media," Phys. Rev. Lett., vol. 65, pp. 2646-2649, 1990.
81. Z. Zhang and S. Satpathy, "Electromagnetic wave propagation in periodic structures: Bloch wave solution of Maxwell's equations," Phys. Rev. Lett., vol. 65, pp. 2650-2653, 1990.
82. K. M. Ho, C. T. Chan, and C. M. Soukoulis, "Existence of a photonic gap in periodic dielectric structures," Phys. Rev. Lett., vol. 65, pp. 3152-3155, 1990.
83. P. R. Villeneuve and M. Piché, "Photonic bandgaps in periodic dielectric structures," Prog. Quantum Electron., vol. 18, pp. 153-200, 1994.
84. M. Plihal and A. A. Maradudin, "Photonic band structure of two-dimensional system: the triangular lattice," Phys. Rev. B, vol. 44, pp. 8565-8571, 1991.
85. R. D. Meade, K. D. Brommer, A. M. Rappe, and J. D. Joannopoulos, "Existence of a photonic band gap in two dimensions," Appl. Phys. Lett., vol. 61, pp. 495-497, 1992.
86. B. E. Maile, A. Forchel, R. Germann, and D. Grützmacher, "Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires," Appl. Phys. Lett., vol. 54, pp. 1552-1554, 1989.
87. E. P. ÓReilly and A. R. Adams, "Band-structure engineering in strained semiconductor lasers," IEEE J. Quantum Electron., vol. 30, pp. 366-379, 1994.
88. T. Baba and T. Matsuzaki, "Fabrication and photoluminescence studies of GaInAsP/InP 2-dimensional pho-tonic crystals," Jpn. J. Appl. Phys., vol. 35, pp. 1348-1352, 1996.
89. A. F. J. Levi, S. L. McCall, S. J. Pearton, and R. A. Logan, "Room temperature operation of submicrometer radius disk laser," Electron. Lett, vol. 29, pp. 1666-1667, 1993.
90. S. L. McCall, A. F. J. Levi, R. E. Slasher, S. J. Pearton, and R. A. Logan, "Whispering gallery mode microdisk lasers," Appl. Phys. Lett., vol. 60, pp. 289-291, 1992.
91. Y. Suematsu and K. Furuya: "Propagation mode and scattering loss of a two-dimensional dielectric waveguide with gradual distribution of refractive index," IEEE Trans. Microwave Theory Tech., vol. MTT-20, pp. 524-531, 1972.
92. U. Mohideen, W. S. Hobson, S. J. Pearton, F. Ren, and R. E. Slusher, "GaAs/AlGaAs microdisk lasers," Appl. Phys. Lett., vol. 64, pp. 1911-1913, 1994.
93. T. Baba, T. Kondo, F. Koyama, and K. Iga, "Finite element analysis of thermal characteristics in continuous wave long wavelength surface emitting lasers (I) - Dielectric cavity structures," Opt. Rev., vol. 2, pp. 123-127, 1995.
94. T. Baba, T. Kondo, F. Koyama, and K. Iga, "Finite element analysis of thermal characteristics in continuous wave long wavelength surface emitting lasers (II) - Semiconductor distributed Bragg reflectors," Opt. Rev., vol. 2, pp. 323-325, 1995.
95. S. W. Corzine, R. S. Geels, J. W. Scott, R. H. Yan, and L. A. Coldren, "Design of Fabry-Perot surface-emitting lasers with a periodic Gain Structure," IEEE J. Quantum Electron., vol. 25, pp. 1513-1524, 1989.
96. D. I. Babic and S. T. Corzine, "Analytical expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors," IEEE J. Quantum Electron., vol. 28, pp. 514-524, 1992.