Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 878-880

  Baba, Toshihiko ^a,b   Fujita, Masayuki ^b   Sakai, Atsushi ^b   Kihara, Mitsuhiro ^b   Watanabe, Ryoh ^b  

^a IEEE   (Japan)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

GaInAsP InP; Microcavity; Microdisk; Semiconductor laser; Whispering gallery mode

Indexed keywords

CONTINUOUS WAVE LASERS; LIGHT EMISSION; PUMPING (LASER); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS;

MICROCAVITY; MICRODISKS; WHISPERING GALLERY MODE;

INJECTION LASERS;

EID: 0031191349     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593330     Document Type: Article

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