Fabrication and photoluminescence studies of GaInAsP/InP 2-dimensional photonic crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1348-1352

  Baba, Toshihiko ^a   Matsuzaki, Tomomi ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

GaInAsP InP; Photonic crystal; Semiconductor laser; Spontaneous emission control; Surface recombination; Thresholdless laser

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRONS; FABRICATION; METHANE; PHOTOLUMINESCENCE; PHOTONS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INJECTION CURRENT; PHOTOLUMINESCENCE MEASUREMENT; PHOTONIC BAND CALCULATION; PHOTONIC CRYSTAL; QUANTUM CONFINEMENT EFFECT; REACTIVE ION BEAM ETCHING; SPONTANEOUS EMISSION CONTROL; SURFACE RECOMBINATION; THRESHOLDLESS LASERS;

CRYSTALS;

EID: 0030080396     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1348     Document Type: Article

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