Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 755-758

  Joseph, Alvin J ^a   Cressler, John D ^a   Jaeger, Richard C ^a   Richey, David M ^a   Harame, David L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; LINEAR INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

CUTOFF FREQUENCY; NEUTRAL BASE RECOMBINATION; PRECISION ANALOG CIRCUITS; TEMPERATURE CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029546477     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)