Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

IEEE Transactions on Electron Devices

Volumn 44, Issue 3, 1997, Pages 354-359

  Tanaka, Tsuyoshi ^a   Furukawa, Hidetoshi ^a   Takenaka, Hiroshi ^a   Ueda, Tetsuzo ^a   Fukui, Takeshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; EFFICIENCY; ELECTRIC FIELDS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

DRAIN CONDUCTANCE; GATE LENGTH; OUTPUT POWER; POWER ADDED EFFICIENCY; POWER FIELD EFFECT TRANSISTORS; SPIKE GATE;

FIELD EFFECT TRANSISTORS;

EID: 0031103047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.556143     Document Type: Article

References (14)

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