Frequency dispersion and modulated signal distortion characteristics of gaas power MESFETs at large signal operation

Electronics and Communications in Japan (Part II: Electronics)

Volumn 77, Issue 11, 1994, Pages 82-88

  Miyatsuji, Kazuo ^a   Furukawa, Hidetoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

frequency dispersion; GaAs; MESFET; surface trap

Indexed keywords

DRAIN CURRENT; FREQUENCY DISPERSION; INTERMODULATION DISTORTION; SURFACE PASSIVATION FILM; SURFACE TRAP;

ELECTRIC CURRENTS; FILMS; FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION; SILICA; SILICON NITRIDE; THERMAL EFFECTS;

MESFET DEVICES;

EID: 0028549399     PISSN: 8756663X     EISSN: 15206432     Source Type: Journal    
DOI: 10.1002/ecjb.4420771108     Document Type: Article

References (5)

1. A low‐distortion K‐band GaAs power FET
2. Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization
3. Low‐field, low‐frequency dispersion of transconductance in GaAs MESFETs with implications for other ratedependent anomalies
4. Modeling deep‐level trapeffects in GaAs MESFETs
5. On the characterization of surface states and deep traps in GaAs MESFETs