-
1
-
-
0022683398
-
The delta-doped field-effect transistor (δ-FET)
-
E. F. Schubert, A. Fischer, and K. Ploog, “The delta-doped field-effect transistor (δ-FET),” IEEE Trans. Electron Devices, vol. ED-33, pp. 625–632, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 625-632
-
-
Schubert, E.F.1
Fischer, A.2
Ploog, K.3
-
2
-
-
30244542708
-
Si delta-doped FET by atmospheric pressure metalorganic chemical vapor deposition
-
ser. no. 112, ch. 7
-
N. Pan, J. Carter, G. S. Jackson, H. Hendriks, J. C. Huang, and X. L. Zhang, “Si delta-doped FET by atmospheric pressure metalorganic chemical vapor deposition,” Inst. Phys. Conf., ser. no. 112, ch. 7, pp. 401–406, 1990.
-
(1990)
Inst. Phys. Conf.
, Issue.112
, pp. 401-406
-
-
Pan, N.1
Carter, J.2
Jackson, G.S.3
Hendriks, H.4
Huang, J.C.5
Zhang, X.L.6
-
3
-
-
36549104120
-
Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the 6-doping technique
-
E. F. Schubert, J. E. Cunningham, and W. T. Tsang, “Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the 6-doping technique,” Appl. Phys. Lett., vol. 49, pp. 1729–1731, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 1729-1731
-
-
Schubert, E.F.1
Cunningham, J.E.2
Tsang, W.T.3
-
4
-
-
0024702629
-
DC and ac characteristics of delta-doped GaAs FET
-
W. P. Hong, J. Harbison, L. Florez, and J. H. Abeles, “DC and ac characteristics of delta-doped GaAs FET,” IEEE Electron Device Lett., vol. 10, pp. 310–312, 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 310-312
-
-
Hong, W.P.1
Harbison, J.2
Florez, L.3
Abeles, J.H.4
-
5
-
-
0022689748
-
A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer
-
H. Hida, K. Ohata, Y. Suzuki, and H. Toyoshima, “A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer,” IEEE Trans. Electron Devices, vol. ED-33, pp. 601–607, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 601-607
-
-
Hida, H.1
Ohata, K.2
Suzuki, Y.3
Toyoshima, H.4
-
6
-
-
0024051247
-
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET’s
-
N. Moll, M. R. Hueschen, and A. Fischer-Colbrie, “Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 879–886, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 879-886
-
-
Moll, N.1
Hueschen, M.R.2
Fischer-Colbrie, A.3
-
7
-
-
0026205131
-
Analysis of delta-doped and uniformly-doped AlGaAs/GaAs HEMT’s by ensemble Monte Carlo simulations
-
K. W. Kim, H. Tian, and M. A. Littlejohn, “Analysis of delta-doped and uniformly-doped AlGaAs/GaAs HEMT’s by ensemble Monte Carlo simulations,” IEEE Trans. Electron Devices, vol. 38, pp. 1737–1742, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1737-1742
-
-
Kim, K.W.1
Tian, H.2
Littlejohn, M.A.3
-
8
-
-
21544462285
-
Transport properties of two-dimensional electron gas systems in delta-doped Si: In0 53Ga0. 47As grown by organometallic chemical vapor deposition
-
W. P. Hong, F. DeRosa, R. Bhat, S. J. Allen, and J. R. Hayes, “Transport properties of two-dimensional electron gas systems in delta-doped Si: In 0 53 Ga 0. 47 As grown by organometallic chemical vapor deposition,” Appl. Phys. Lett., vol. 54, pp. 457–459, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 457-459
-
-
Hong, W.P.1
DeRosa, F.2
Bhat, R.3
Allen, S.J.4
Hayes, J.R.5
-
9
-
-
0024629435
-
DC and microwave characteristics of sub-0.1-gm gatelength planar-doped pseudomorphic HEMT’s
-
P.C. Chao, M. S. Shur, R. C. Tiberio, K. H. G. Duh, P. M. Smith, J. M. Ballingall, P. Ho, and A. A. Jabra, “DC and microwave characteristics of sub-0.1-gm gatelength planar-doped pseudomorphic HEMT’s,” IEEE Trans. Electron Devices, vol. 36, pp. 461–473, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 461-473
-
-
Chao, P.C.1
Shur, M.S.2
Tiberio, R.C.3
Duh, K.H.G.4
Smith, P.M.5
Ballingall, J.M.6
Ho, P.7
Jabra, A.A.8
-
10
-
-
84941514255
-
Atomic layer epitaxy of device quality GaAs with a 0.6 /im per hour growth rate
-
to be published.
-
P. C. Colter, S. A. Hussien, A. Dip, M. U. Erdogan, W. M. Duncan, and S. M. Bedair, “Atomic layer epitaxy of device quality GaAs with a 0.6 /im per hour growth rate,” Appl. Phys. Lett., to be published.
-
Appl. Phys. Lett.
-
-
Colter, P.C.1
Hussien, S.A.2
Dip, A.3
Erdogan, M.U.4
Duncan, W.M.5
Bedair, S.M.6
-
11
-
-
84941515617
-
Numerical modeling of microwave performance for submicron GaAs MESFET’s
-
H. Tian, M. Du, S. Xiao, and C. Huang, “Numerical modeling of microwave performance for submicron GaAs MESFET’s,” presented in the 3rd Int. Conf. on Simulation of Semiconductor Devices and Process, SISDEP-88, Bologna, Italy, 1988.
-
(1988)
presented in the 3rd Int. Conf. on Simulation of Semiconductor Devices and Process, SISDEP-88, Bologna, Italy
-
-
Tian, H.1
Du, M.2
Xiao, S.3
Huang, C.4
-
12
-
-
0023382802
-
An analytic model for HEMT’s using new velocity-field dependence
-
C.S. Chang and H. R. Fetterman, “An analytic model for HEMT’s using new velocity-field dependence,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1456–1462, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 1456-1462
-
-
Chang, C.S.1
Fetterman, H.R.2
-
13
-
-
0002803320
-
Measurement of the velocity-field characteristic of gallium arsenide
-
J. R. Ruch and G. S. Kino, “Measurement of the velocity-field characteristic of gallium arsenide,” Appl. Phys. Lett., vol. 10, pp. 40–42, 1967.
-
(1967)
Appl. Phys. Lett.
, vol.10
, pp. 40-42
-
-
Ruch, J.R.1
Kino, G.S.2
-
14
-
-
36549099295
-
Ionized impurity scattering in Monte Carlo calculations
-
T. G. Van de Roer and F. P. Widdershoven, “Ionized impurity scattering in Monte Carlo calculations,” J. Appl. Phys., vol. 59, pp. 813–815, 1986.
-
(1986)
J. Appl. Phys.
, vol.59
, pp. 813-815
-
-
Van de Roer, T.G.1
Widdershoven, F.P.2
-
15
-
-
0001726871
-
Subthreshold electron velocity-field characteristic of GaAs and In0.53Ga0.47As
-
M. A. Haase, V. M. Robbins, N. Tabatabaie, and G. E. Stillman, “Subthreshold electron velocity-field characteristic of GaAs and In 0.53Ga0.47 As,” J. Appl. Phys., vol. 57, pp. 2295–2298, 1984.
-
(1984)
J. Appl. Phys.
, vol.57
, pp. 2295-2298
-
-
Haase, M.A.1
Robbins, V.M.2
Tabatabaie, N.3
Stillman, G.E.4
-
16
-
-
0019003692
-
Relation of drift velocity to low-field mobility and high-field saturation velocity
-
K. K. Thomber, “Relation of drift velocity to low-field mobility and high-field saturation velocity,” J. Appl. Phys., vol. 51, pp. 2127–2136, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2127-2136
-
-
Thomber, K.K.1
-
17
-
-
0022120352
-
Two-dimensional simulation of MODFET and GaAs gate heterojunction FET’s
-
J. Y.-F. Tang, “Two-dimensional simulation of MODFET and GaAs gate heterojunction FET’s,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1817–1823, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1817-1823
-
-
Tang, J.Y.F.1
-
18
-
-
0024750692
-
Studies of dc, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMT’s
-
H.-F. Chau, D. Pavlidis J.-L. Cazaux, and J. Graffeuil, “Studies of dc, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMT’s,” IEEE Trans. Electron Devices, vol. 36, pp. 2288–2298, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2288-2298
-
-
Chau, H.-F.1
Pavlidis, D.2
Cazaux, J.L.3
Graffeuil, J.4
-
19
-
-
0021640229
-
Pulse doped MODFETS
-
M. Hueschen, N. Moll, E. Gowen, and J. Miller, “Pulse doped MODFETS,” in IEDM Tech. Dig., 1984, pp. 348–351.
-
(1984)
IEDM Tech. Dig.
, pp. 348-351
-
-
Hueschen, M.1
Moll, N.2
Gowen, E.3
Miller, J.4
-
21
-
-
0022135161
-
Scaled performance for submicron GaAs MESFET’s
-
K. Yokoyama, M. Tomizawa, and A. Yoshii, “Scaled performance for submicron GaAs MESFET’s,” IEEE Electron Device Lett., vol. EDL-6, pp. 536–538, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 536-538
-
-
Yokoyama, K.1
Tomizawa, M.2
Yoshii, A.3
-
22
-
-
0001495342
-
Characteristics of junction field effect devices with small gate length-to-width ratios
-
J. R. Hauser, “Characteristics of junction field effect devices with small gate length-to-width ratios,” Solid-State Electron., vol. 10, pp. 577–587, 1967.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 577-587
-
-
Hauser, J.R.1
-
23
-
-
0025417495
-
Characteristics including electron velocity overshoot for 0. l-μm-gatelength GaAs SAINT MESFET’s
-
T. Enoki, S. Sugitani, and Y. Yamane, “Characteristics including electron velocity overshoot for 0. l-μm-gatelength GaAs SAINT MESFET’s,” IEEE Trans. Electron Devices, vol. 37, pp. 935–941, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 935-941
-
-
Enoki, T.1
Sugitani, S.2
Yamane, Y.3
-
24
-
-
19944386196
-
A semi-empirical comparison of key dynamic properties of GaAs and InP based HFET structures
-
ser, ch. 8
-
E. Kohn, “A semi-empirical comparison of key dynamic properties of GaAs and InP based HFET structures,” Inst. Phys. Conf., ser. no. 112, ch. 8, pp. 411–416, 1990.
-
(1990)
Inst. Phys. Conf.
, Issue.112
, pp. 411-416
-
-
Kohn, E.1
-
25
-
-
0024014115
-
Theory and applications of near ballistic transport in semiconductors
-
K. Hess and G. J. lafrate, “Theory and applications of near ballistic transport in semiconductors,” Proc. IEEE, vol. 76, pp. 519–532, 1988.
-
(1988)
Proc. IEEE
, vol.76
, pp. 519-532
-
-
Hess, K.1
Lafrate, G.J.2
-
26
-
-
84916444036
-
The physics of submirconβltrasubmicron dimensions
-
D. K. Ferry, Ed. Indianapolis, IN: Sams
-
G. J. lafrate, “The physics of submirconβltrasubmicron dimensions,” in Gallium Arsenide Technology, D. K. Ferry, Ed. Indianapolis, IN: Sams, 1985, pp. 443–488.
-
(1985)
Gallium Arsenide Technology
, pp. 443-488
-
-
Lafrate, G.J.1
-
27
-
-
0024051140
-
Velocity overshoot in ultra-short-gatelength GaAs MESFET’s
-
G. Bernstein and D. K. Ferry, “Velocity overshoot in ultra-short-gatelength GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 887–892, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 887-892
-
-
Bernstein, G.1
Ferry, D.K.2
|