MILLIMETER WAVE DOUBLE HETEROJUNCTION PSEUDOMORPHIC POWER HEMTS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 854-856

  Smith, P ^a   Lester, L ^a   Chao, P ^a   Lee, B ^a   Smith, R ^a   Ballingall, J ^a   Duh, K ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS - DOPING;

DOUBLE HETEROJUNCTION PSEUDOMORPHIC POWER HEMTS; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); PLANAR DOPING; SILICON NITRIDE PASSIVATION; SUPERLATTICE BUFFER;

TRANSISTORS;

EID: 0023549162     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191569     Document Type: Conference Paper

References (7)