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Applied Physics Letters

Volumn 49, Issue 25, 1986, Pages 1729-1731

Self-aligned enhancement-mode and depletion-mode GaAs field-effect transistors employing the δ-doping technique

(3) Schubert, E F a Cunningham, J E a Tsang, W T a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549104120 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.97229 Document Type: Article

Times cited : (43)

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