A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 3, 1997, Pages 338-344

  Gasmi, Ahmed ^a   Huyart, Bernard ^a   Bergeault, Eric ^a   Jallet, Louis P ^a  

^a TELECOM PARISTECH   (France)

Author keywords

HEMT; MESFET; MMIC; Modelization; Noise

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NETWORK COMPONENTS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

BIAS CURRENT; GATEWIDTH; MODELIZATION; TRANSISTOR NOISE;

SPURIOUS SIGNAL NOISE;

EID: 0031095403     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.563331     Document Type: Article

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