Design of microwave gaas mesfet's for broad-band low-noise amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 27, Issue 7, 1979, Pages 643-650

  Fukui, Hatsuaki ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, MICROWAVE; MATHEMATICAL MODELS;

NOISE PARAMETERS;

TRANSISTORS, FIELD EFFECT;

EID: 0018491891     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1979.1129694     Document Type: Article

References (15)

1. H. F. Cooke, “Microwave FET's—A status report,” in IEEE ISSCC Dig. Tech. Papers, 1978, pp. 116-117.
2. H. Rothe and W. Dahlke, “Theory of noisy fourpoles,” Proc. IRE, vol. 44, pp. 811-818, June 1956.
3. H. Fukui, “Available power gain, noise figure, and noise measure of twoports and their graphical representation,” IEEE Trans. Circuit Theory, vol. CT-13, pp. 137-142, June 1966.
4. J. A. Eisenberg, “Systematic design of low-noise, broad band microwave amplifiers using three terminal devices,” in Microwave Semiconductor Devices, Circuits and Applications, Proc. Fourth Cornell Conf., 1973, pp. 113-122.
5. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics. New York: Academic, vol. 38, 1975, pp. 195-265.
6. H. Fukui, “The noise performance of microwave transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 329-341, Mar. 1966.
7. W. O. Schlosser, private communication.
8. B. S. Hewitt et al., “Low-noise GaAs M.E.S.F.E.T.S.,” Electron. Lett., vol. 12, pp. 309-310, June 10, 1976.
9. “IRE Standards on Electron Tubes: Methods of Testing,” 1962, 62 IRE 7 S1, pt. 9: Noise in linear twoports.
10. J. Jahncke, “Höchstfrequenzeigenshaften eines GaAs MESFET's in Steifenleitungstechnik,” Nachrichtentech. Z., vol. 5, pp. 193-199, May 1973.
11. H. Fukui, “Determination of the basic device parameters of a GaAs MESFET,” Bell Syst. Tech. J., vol. 58, pp. 771-797, Mar. 1979.
12. B. S. Hewitt et al., “Low-noise GaAs MESFETs: Fabrication and performance,” in Gallium Arsenide and Related Compounds (Edinburg) 1976, Conf. Series No. 33a, The Inst. Physics, Bristol and London, 1977, pp. 246-254.
13. H. Fukui, “Optimal noise figure of microwave GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1032-1037, July 1979.
14. M. Ogawa, K. Ohata, T. Furutsuka, and N. Kawamura, “Submicron single-gate and dual-gate GaAs MESFET's with improved low noise and high gain performance,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 300-306, June 1976.
15. H. F. Cooke, “Microwave field effect transistors in 1978,” Microwave J., vol. 21, no. 4, pp. 43-48, Apr. 1978.