Heterojunction blocking contacts in MOCVD grown Hg 1-xCd xTe long wavelength infrared photoconductors

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 239-249

  Musca, C A ^a,b   Siliquini, J F ^a   Nener, B D ^a   Faraone, L ^a  

^a IEEE   (Australia)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; HETEROINTERFACE; HETEROJUNCTION BLOCKING CONTACT; LONG WAVELENGTH INFRARED; MINORITY CARRIER;

CARRIER CONCENTRATION; CHARGE CARRIERS; ENERGY GAP; FABRICATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODELS;

PHOTODETECTORS;

EID: 0031075989     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557711     Document Type: Article

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