Effects of blocking contacts on generation-recombination noise and responsivity in intrinsic photoconductors

Journal of Applied Physics

Volumn 56, Issue 6, 1984, Pages 1663-1669

  Smith, D L ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING CADMIUM COMPOUNDS;

MERCURY CADMIUM TELLURIDE;

PHOTOCONDUCTING MATERIALS;

EID: 0021498140     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.334155     Document Type: Article

References (14)

1. That the bandgap difference should appear primarily in the valence band for a highly graded interface is a consequence of a nearly constant