메뉴 건너뛰기




Volumn 8, Issue 6S, 1993, Pages 788-804

The impact of characterization techniques on HgCdTe infrared detector technology

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ENERGY GAP; HETEROJUNCTIONS; INFRARED DETECTORS; PHOTOCONDUCTING MATERIALS; PHOTODIODES; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0027610056     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/6S/003     Document Type: Article
Times cited : (95)

References (68)
  • 6
  • 60
    • 0023166669 scopus 로고
    • Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects
    • (1988) Journal of Crystal Growth , vol.86 , Issue.1-4 , pp. 161
    • Tung, T1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.