Accumulation effects at contacts to n-type cadmium-mercury-telluride photoconductors

Infrared Physics

Volumn 22, Issue 6, 1982, Pages 367-376

  Ashley, T ^a   Elliott, C T ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED DETECTORS; SEMICONDUCTING CADMIUM COMPOUNDS - MEASUREMENTS;

PHOTOCONDUCTING DEVICES;

EID: 0020206873     PISSN: 00200891     EISSN: None     Source Type: Journal    
DOI: 10.1016/0020-0891(82)90009-4     Document Type: Article

References (8)

1. On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†
2. Sensitivity limits of 0.1 eV intrinsic photoconductors
3. Contact and bulk effects in intrinsic photoconductive infrared detectors
4. Sputter cleaning and dry oxidation of CdTe, HgTe, and Hg0.8Cd0.2Te surfaces