Improved device technology for epitaxial Hg1-xCdxTe infrared photoconductor arrays

Semiconductor Science and Technology

Volumn 9, Issue 8, 1994, Pages 1515-1522

  Siliquini, J F ^a   Fynn, K A ^a   Nener, B D ^a   Faraone, L ^a   Hartley, R H ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION LIMIT; INFRARED PHOTOCONDUCTOR ARRAYS; LIQUID PHASE EPITAXIAL GROWTH; LONG WAVELENGTH INFRARED DETECTORS; MINORITY CARRIER; THERMAL IMAGING SYSTEM;

CHARGE CARRIERS; EPITAXIAL GROWTH; IMAGING SYSTEMS; INFRARED DETECTORS; PASSIVATION; PERFORMANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SURFACES; TECHNOLOGY;

PHOTOCONDUCTING MATERIALS;

EID: 0028484408     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/8/013     Document Type: Article

References (17)

1. Infrared image sensors
2. Passivation of mercury cadmium telluride surfaces
3. Characterization of (Hg,Cd)Te by the photoconductive decay technique