Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTe

Journal of Electronic Materials

Volumn 22, Issue 8, 1993, Pages 899-906

  Bajaj, J ^a   Irvine, S J C ^a   Sankur, H O ^a   Svoronos, Spyros A ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

HgCdTe; in situ monitoring of growth; laser reflectance; MOCVD

Indexed keywords

CRYSTAL GROWTH; LASER APPLICATIONS; MONITORING; SEMICONDUCTOR MATERIALS; SUBSTRATES;

ELECTRONIC MATERIAL CHARACTERIZATION; LASER REFLECTANCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH MONITORING;

CHEMICAL VAPOR DEPOSITION;

EID: 0027643837     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02817503     Document Type: Article

References (16)

1. Selected area epitaxy in II–VI compounds by laser-induced photo-metalorganic vapor phase epitaxy
2. Study of microinhomogeneities in midwave infrared mercury cadmium telluride grown by metalorganic chemical vapor deposition-interdiffused multilayer process onto GaAs and GaAs/Si substrates
3. Interdiffusion and related defect mechanisms in the HgTe–CdTe system