Temperature Dependence of Hgo.6sCdo.32Te Infrared Photoconductor Performance

IEEE Transactions on Electron Devices

Volumn 42, Issue 8, 1995, Pages 1441-1448

  Siliquini, J F ^a   Musca, C A ^a   Nener, B D ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DETECTORS; ELECTRIC CHARGE; ELECTRONS; LIQUID PHASE EPITAXY; PASSIVATION; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE; THERMAL EFFECTS;

INFRARED PHOTOCONDUCTOR; NOISE SOURCES; NOISE VOLTAGE; PHOTOCONDUCTORS; RESPONSIVITY; SEMICONDUCTING MERCURY COMPOUNDS; SEMICONDUCTOR SURFACE CHARGE DENSITY;

PHOTOCONDUCTING MATERIALS;

EID: 0029357483     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398658     Document Type: Article

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