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Journal of Applied Physics

Volumn 57, Issue 6, 1985, Pages 2001-2009

Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects

(2) Schacham, S E a Finkman, E a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008754941 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.334386 Document Type: Article

Times cited : (159)

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