On buried oxide effects in SOI lateral bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 139-144

  Banna, Srinivasa R ^a   Chan, Philip C H ^a   Lau, Jack ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELDS; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

BURIED OXIDE EFFECTS; DEPLETION WIDTHS; PARASITIC METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; SILICON ON INSULATOR LATERAL BIPOLAR TRANSISTOR (SOILBT);

BIPOLAR TRANSISTORS;

EID: 0030735468     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554803     Document Type: Article

References (11)

1. B.Y. Tsaur, D. J. Silversmith, J. C. C. Fan, and R. W. Mountin, "Fully isolated lateral bipolar-MOS transistor fabricated on ZMR Si film on SiO2," IEEE Electron Device Lett., vol. EDL-4, pp. 269-271, Aug. 1983.
2. M. Ridder and D. A. Antoniadis, "Silicon-Insulator bipolar transistors," IEEE Electron Device Lett., vol. EDL-4, pp. 193-195, June 1983.
3. J.C. Sturm, J. P. McVittie, J. F. Gibbons, and L. Pfeiffer, "A latéral Silicon-on-Insulator bipolar transistor with a self-aligned base contact," IEEE Electron Device Lett., vol. EDL-8, pp. 104-108, Mar. 1987.
4. G.G. Shahidi, D. D. Tang, B. Davari, Y. Taur, P. McFarland, K. Jenkins, D. Danner, M. Rodriguez, A. Megdanis, E. Petrillo, M. Polcari, and T. H. Ning, "Novel high-performance lateral bipolar on SOI," in IEDM Tech. Dig., 1991, pp. 663-666, 1991.
5. H. Nishizawa, S. Azuma, T. Yoshitake, K. Yamada, T. Ikeda, H. Masuda, and A. Anzai, "A fully SiC>2 -isolated self-aligned SOI-bipolar transistor for VLSI's," in Proc. IEEE Bipolar Circuits and Technology Mfg., 1991, pp. 53-58.
6. S. Parke, C. Hu, and P. K. Ko, "A versatile SOI BiCMOS technology with complementary lateral BJT's," in IEDM Tech. Dig., 1992, pp. 453-456.
7. P.R. Ganci, J. J. J. Hajjar, T. Clark, P. Humphries, J. Lapham, and D. Buss, "Self-Heating in high-performance bipolar transistors fabricated on SOI substrates," in IEDM Tech. Dig., 1992, pp. 417-4120.
8. B. Edholm, J. Olsson, and A. Soderberg, "A self-aligned lateral bipolar transistor realized on SIMOX-Material," IEEE Trans. Electron Devices, vol. 40, pp. 2359-2360, Dec. 1993.
9. S.R. Banna, P. C. H. Chan, and P. K. Ko, "On buried oxide effects in SOI lateral bipolar transistors," in Proc. IEEE Int. SOI Conf., 1994, pp. 29-30.
10. J. Lau, "Silicon magnetic sensors," Ph.D. dissertation, University of Science and Technology, Clear Water, Hong Kong.
11. T.-Y. Chiu et al., "Electrical profiling of collector and base doping concentration," in IEDM Tech. Dig., 1991, pp. 849-852.