Electrical profiling of collector and base doping concentration

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 849-852

  Chiu, Tzu Yin ^a   Sung, Janmye J ^a   Pavlo, Joe ^b   Liu, Te Yin M ^a   Lee, Kwing F ^a   Possanza, William ^b   Moerschel, Kenneth ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b AT and T Microelectronics   (United States)

Author keywords

Capacitance measurement; Charge carrier density; Doping profiles; Electrodes; Monitoring; Noise measurement; Parasitic capacitance; Rough surfaces; Surface roughness; Voltage

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON DEVICES; MONITORING; SURFACE ROUGHNESS;

BASE DOPING PROFILE; BIPOLAR DEVICE; DOPING CONCENTRATION; DOPING PROFILES; MEASUREMENT TECHNIQUES; NOISE MEASUREMENTS; PARASITIC CAPACITANCE; ROUGH SURFACES;

CAPACITANCE;

EID: 84954126536     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235292     Document Type: Conference Paper

References (0)