A Self-Aligned Lateral Bipolar Transistor Realized on SIMOX-Material

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2359-2360

  Edholm, Bengt ^a   Olsson, Jörgen ^a   Söderbärg, Anders ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; GAIN MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY;

BASE WIDTH DEFINITION; CURRENT GAIN; EMITTER ALIGNMENT; NITRIDE SPACER; SELF ALIGNED LATERAL BIPOLAR TRANSISTOR; SIMOX MATERIAL;

BIPOLAR TRANSISTORS;

EID: 0027803922     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249487     Document Type: Article

References (5)

1. U. Magnusson, B. Edholm. and F. Masszi. “A lateral bipolar transistor concept on SOI using a sell-aligned base definition technique,” Microelectron, Eng., vol. 15, 341. 1991.
2. T. Sugii et al., “A new SOl-lateral bipolar transistor for high-speed operation,” Japanese J. Appl. Phys., vol. 30, no. 12B, p. 12080. 1991.
3. B. Edholm, J. Olsson, and Anders Soderbarg “A lateral bipolar transistor concept tested on SIMOX- and BSOI-matcrials.” 1992 IEEE Internal. SOI Conf. Proc., p. 76.
4. G. G. Shahidi et al., “A novel high-performance lateral bipolar on SOI,” 1991 IEDM Tech. Dig., p. 663.
5. S. Parke, C. Hu. and P. K. Ko. “Complementary, high-performance lateral BJTs in a SIMOX C-BiCMOS technology.” 1992 IEEE Internal. SOI Conf. Proc., p. 142.