A novel high-performance lateral bipolar on SOI

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 663-666

  Shahidi, G G ^a   Tang, D D ^a   Davari, B ^a   Taur, Y ^a   McFarland, P ^a   Jenkins, K ^a   Danner, D ^a   Rodriguez, M ^a   Megdanis, A ^a   Petrillo, E ^a   Polcari, M ^a   Ning, T H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

BiCMOS integrated circuits; Contact resistance; Delay effects; Doping; Electric breakdown; Fabrication; Implants; MOSFETs; Parasitic capacitance; Silicon on insulator technology

Indexed keywords

BICMOS TECHNOLOGY; CAPACITANCE; CONTACT RESISTANCE; DENTAL PROSTHESES; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRON DEVICES; FABRICATION; MOSFET DEVICES;

BICMOS INTEGRATED CIRCUITS; BIPOLAR STRUCTURE; COLLECTOR RESISTANCE; DELAY EFFECTS; DEVICE CHARACTERISTICS; MOSFETS; PARASITIC CAPACITANCE; PARASITIC JUNCTION CAPACITANCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84954158922     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235335     Document Type: Conference Paper

References (0)