The effect of doping profile variations upon deep submicrometer MOSFET's

Microelectronic Engineering

Volumn 28, Issue 1-4, 1995, Pages 155-161

  Brews, J R ^a   Zhou, Ziye ^b   Buxo, Juan ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORMS; MOSFET DEVICES; NUMERICAL ANALYSIS; SENSITIVITY ANALYSIS; SHRINKAGE; VLSI CIRCUITS;

BARRIER POTENTIAL; CURRENT VOLTAGE CURVES; DEBYE LENGTH ACCURACY; DEEP SUBMICROMETER MOSFET DEVICES; DOPING PROFILE VARIATION EFFECTS; EFFECTIVE CHANNEL LENGTH;

SEMICONDUCTOR DOPING;

EID: 0029321702     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00035-7     Document Type: Article

References (1)

1. Physics of the MOS Transistor