An Evaluation of Super-Steep-Retrograde Channel Doping for Deep-Submicron MOSFET Applications

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1880-1882

  Ellis Monaghan, J J ^a   Kim, K W ^a   Littlejohn, M A ^a   Hauser, J R ^a   Masnari, N A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION LANGUAGES; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MONTE CARLO METHODS; PERFORMANCE; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CARRIER TRANSPORT; DRAIN CURRENT; DRIFT DIFFUSION SIMULATIONS; INTERFACE STATE GENERATION RATE; SILICON BAND STRUCTURE; SUPER STEEP RETROGRADE CHANNEL;

MOSFET DEVICES;

EID: 0028517966     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324605     Document Type: Article

References (11)

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