A comparison of radiation damage in linear ics from cobalt-60 gamma rays and 2.2 mev electrons

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4192-4196

  Gauthier, Mlichael K ^a   Nichols, Donald K ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GAMMA RAYS;

INTEGRATED CIRCUITS;

EID: 0020915906     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333107     Document Type: Article

References (7)

1. Price, W. E., K. E. Martin, D. K. Nichols, M. K. Gauthier, and S. F. Brown, “Total Dose Radiation Effects Data for Semiconductor Devices,” Vols I and II, JPL Publication 81–66, (August 1981).
2. Nichols, D. K., W. E. Price, and M. K. Gauthier, “A Comparison of Radiation Damage i n Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Elect-rons,” IEEE Trans. on Nuc. Sci., NS-29, No. 6, 1970, (December 1982).
3. Stanley, A. G., and M. K. Gauthier, “SEM Analysis of Ionizing Radiation Effects in Linear Integrated Circuits,” IEEE Trans. on Nuc. Sci., NS-24, No. 6, (December 1977).
4. Gauthier, M. K., J. Perret, and K. C. Evans, “SEM Analysis of Ionizing Radiation Effects in an Analog to Digital Converter (AD571),” IEEE Trans. on Nuc. Sci., NS-28, No'. 6, (December 1981).
5. Gauthier, M. K., and Nichols, D. K., “A Comparison of Radiation Damage in Linear IC's from Cobalt-60 Gamma Rays and 2.2 MeV Electrons”, Final Report, JPL September 1983.
6. Brucker, G. J., E. G. Stassinopoulos, 0. Van Gunter, L. A. August, and T. M. Jordan, “The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS devices,” IEEE Trans. on Nuc. Sci., NS-29, No. 6, 1966, (December 1982).
7. Stassinopoulos, E. G., G. J. Brucker, O. Van Gunter, A. R. Knudson, and T. M. Jordan, “Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources,” IEEE Trans. on Nuc. Sci., NS-30, No. 3, 1880 (June 1983).