Radiation effects on soi analog devices parameters

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 565-571

  Flament, O ^a   Leray, J L ^a   Martin, J L ^a   Montaron, J ^a   Raffaelli, M ^a   Blanc, J P ^a   Delevoye, E ^a   Gautier, J ^a   Pelloie, J L ^a   de Poncharra, J ^a   Truche, R ^a   Delagnes, E ^a   Dentan, M ^a   Fourches, N ^a  

^a CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL CIRCUITS; DOSIMETRY; INTEGRATED CIRCUIT TESTING; LINEAR INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; NEUTRONS; OPERATIONAL AMPLIFIERS; RADIATION HARDENING; SHIFT REGISTERS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

ANALOG TEST CIRCUITS; DIGITAL TEST CIRCUITS; GUARD BAND STRUCTURE;

RADIATION EFFECTS;

EID: 0028448143     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299800     Document Type: Article

References (20)

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