A MOSFET with Si-implanted gate-SiO2 insulator for nonvolatile memory applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 469-472

  Hori, T ^a   Ohzone, T ^a,b   Odake, Y ^a   Hirase, J ^a  

^a PANASONIC CORPORATION   (Japan)

^b TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FLASH MEMORY; NONVOLATILE STORAGE; SILICA; STATIC RANDOM ACCESS STORAGE;

EXCESS SI; HIGH DOSE; MEMORY EFFECTS; MOS-FET; NON-VOLATILE MEMORY APPLICATION; SINGLE-POLY; THERMAL SIO2;

MOSFET DEVICES;

EID: 85063577685     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307403     Document Type: Conference Paper

References (1)

1. A. Kalnitsky et al., "A model of charge transport in thermal Si02 implanted with Si", IEDM Tech. Dig., 1988, p. 516.