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Volumn 60, Issue 6, 1992, Pages 730-732

Time-dependent positive charge generation in very thin silicon oxide dielectrics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36449002654     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.106551     Document Type: Article
Times cited : (42)

References (27)
  • 25
    • 84951045463 scopus 로고
    • Per Lundgren, “[formula omitted] Interface Trap Annealing in Metal-Tunnel Oxide-Semiconductor (MTOS) Devices,” Technical Report, Department of Solid State Electronics, Chalmers University of Technology, Gothenburg, Sweden
    • (1991)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.