Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si

Applied Physics Letters

Volumn 65, Issue 14, 1994, Pages 1814-1816

  Shimizu Iwayama, Tsutomu ^a   Nakao, Setsuo ^b   Saitoh, Kazuo ^b  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; FUSED SILICA; GAS LASERS; ION IMPLANTATION; OXIDES; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA;

ARGON ION LASERS; DEPTH PROFILES; ELECTRON HOLE RECOMBINATION; SILICA GLASS; THERMAL OXIDE FILMS;

PHOTOLUMINESCENCE;

EID: 0028763293     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112852     Document Type: Article

References (26)