The nature of the trapped hole annealing process

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1808-1815

  Lelis, A J ^a   Oldham, T R ^a   Boesch, H E ^a   McLean, F B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS; SEMICONDUCTING SILICON;

INTERFACE TRAP DENSITY; TRAPPED HOLE ANNEALING;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024913722     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45373     Document Type: Article

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