Temperature Dependence of Hot-Electron-Induced Degradation in MOSFET's

IEEE Electron Device Letters

Volumn 5, Issue 5, 1984, Pages 148-150

  Hsu, F C ^a   Chiu, K Y ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - DEGRADATION;

ENHANCED INTERFACE-STATE GENERATION MECHANISM; FIXED STRESSING BIAS; HOT-ELECTRON INDUCED DEGRADATION; SUBSTRATE CURRENT LEVEL; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021427595     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25865     Document Type: Article

References (12)

1. T. H. Ning et al., “1 µm MOSFET VLSI technology: part IV-Hot-electron design constraints,” IEEE Trans. Electron Devices, vol. EDL-26, pp. 346, 1979.
2. E. Takeda and N. Suzuki, “An empirical model for device degradation due to hot-carrier injection,” IEEE Electron Device Lett., vol. EDL-4, pp. 111, 1983.
3. S. Tam and F-C. Hsu “A physical model for hot-electron induced degradation in MOSFET's,” IEEE Semiconductor Interface Specialist Conf., Ft. Lauderdale, FL, Dec. 1983.
4. S. Tam, F-C. Hsu and C. Hu, “A physical model of channel hot-electron induced degradation in MOSFETs,” to be published.
5. H. Matsumoto et al., “Effect of long-term stress on IGFET degradations due to hot electron trapping,” IEEE Trans. Electron Devices, vol. EDL-28, pp. 923, 1981.
6. Y. Satoh et al., “The effect of temperature on hot electron trapping in MOSFET's,” Japan J. Appl. Phys., vol. 22, pp. L221, 1983.
7. S. Tam et al., “Correlation between substrate and gate currents in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1740, 1982.
8. S. M. Sze, “Physics of semiconductor devices,” 2nd ed. New York: Wiley, 1981, pp. 30, 47.
9. P. K. Ko, “Hot electron effects in MOSFETs,” Ph.D. dissertation, EECS Dept., U.C. Berkeley, June 1982.
10. C. R. Crowell and S. M. Sze, “Temperature dependence of avalanche multiplication in semiconductors,” Appl. Phys. Lett., vol. 9, pp. 242, 1966.
11. S. Tam et al., “Hot-electron currents in very short channel MOSFET's,” IEEE Electron Device Lett., vol. EDL-4, pp. 249, 1983.
12. C. Hu, “Hot-electron effects in MOSFET's,” IEDM Tech. Dig., 1983, pp. 176.