Breakdown Walkout in AlGaAs/GaAs HEMT’s

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 738-740

  Lee, B R ^c   Kao, M Y ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, MESFET;

BREAKDOWN VOLTAGE; BREAKDOWN WALKOUT; HEMT; UNPASSIVATED HEMT;

TRANSISTORS, FIELD EFFECT;

EID: 0026840165     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123504     Document Type: Article

References (1)

1. R. Williams, “Wet etching,” in Modern GaAs Processing Methods. Norwood, MA: Artech House, 1990.