Hot-Electron-Induced MOSFET Degradation at Low Temperatures

IEEE Electron Device Letters

Volumn 6, Issue 9, 1985, Pages 450-452

  Tzou, J J ^a   Yao, C C ^a   Cheung, R ^a   Chan, H ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - TRANSPORT PROPERTIES; SEMICONDUCTOR MATERIALS - DOPING;

ELECTRON TRAPPING; HOT ELECTRON-INJECTION (HEI) DEGRADATION; LIGHTLY DOPED DRAIN (LDD) REGION; N-CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022114763     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26189     Document Type: Article

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