Lateral IGBT structure on the SOI film with the collector-short region for improved blocking capability

IEICE Transactions on Electronics

Volumn E79-C, Issue 4, 1996, Pages 593-596

  Sumida, Hitoshi ^a   Hirabayashi, Atsuo ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

Blocking capability; Collector short region; Leakage current; LIGBT; SOI

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

BLOCKING CAPABILITY; COLLECTOR SHORT REGION; MINORITY CARRIER;

BIPOLAR TRANSISTORS;

EID: 0030121660     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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