Breakdown Voltage Enhancement for Devices on Thin Silicon Layer/Silicon Dioxide Film

IEEE Transactions on Electron Devices

Volumn 38, Issue 7, 1991, Pages 1650-1654

  Nakagawa, Akio ^a   Yasuhara, Norio ^a   Baba, Yoshiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FILMS--DIELECTRIC; OXIDES--THIN FILMS;

BREAKDOWN VOLTAGE ENHANCEMENT; DIELECTRIC ISOLATION; HIGH VOLTAGE POWER IC; SILICON DIOXIDE SUBSTRATE; SILICON LAYER; SOI DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0026188097     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.85162     Document Type: Article

References (8)

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