Forward blocking characteristics of SOI power devices at high temperatures

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 117-121

  Constapel, Rainer ^a   Korec, Jacek ^a  

^a AEG Telefunken   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BIPOLAR TRANSISTORS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; VOLTAGE MEASUREMENT;

FORWARD BLOCKING CHARACTERISTICS; POWER DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0028713357     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)