Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

Journal of Crystal Growth

Volumn 107, Issue 1-4, 1991, Pages 926-931

  Azoulay, R ^a   Clei, A ^a   Dugrand, L ^a   Draidia auN ^a   Leroux, G ^a   Biblemont, S ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ORGANOMETALLICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICES, MESFET; X-RAYS - DIFFRACTION;

VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0025790025     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90582-P     Document Type: Article

References (16)

1. Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy
2. Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE
3. Proc. 14th Intern. Symp. on GaAs and Related Compounds
4. Heteroepitaxy of GaAs on InP by molecular-beam epitaxy