Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillators

Solid State Electronics

Volumn 25, Issue 5, 1982, Pages 367-374

  Graffeuil, J ^a   Tantrarongroj, K ^a   Sautereau, J F ^a  

^a UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS;

TRANSISTORS, FIELD EFFECT;

EID: 0020125224     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(82)90121-6     Document Type: Article

References (15)

1. Generation-recombination noise produced in the channel of JFET's
2. Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors
3. Carrier density fluctuation noise in field-effect transistors
4. Theory of low-frequency generation noise in junction-gate field-effect transistors
5. Analytical model of GaAs MESFET's
6. FET noise sources and their effects on amplifier performance at low frequencies