Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2016-2022

  Surya, Charles ^a   Brown, Elliott R ^b   Maki, Paul A ^b   Ng, Sze Him ^c  

^a NORTHEASTERN UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Dawn Technologies Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

ENERGY BARRIER; HOPPING CONDUCTION; LORENTZIAN STRUCTURES; LOW FREQUENCY FLUCTUATIONS; RANDOM TELEGRAPH NOISE; RESONANT TUNNELING DIODES;

TUNNEL DIODES;

EID: 0028549242     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333819     Document Type: Article

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