Influence of GaAs buffer thickness on low-frequency and microwave noise in GaAs MESFETs grown on InP substrates

Electronics Letters

Volumn 29, Issue 4, 1993, Pages 382-384

  Chertouk, M ^a   Boudiaf, A ^a   Chovet, A ^b   Azoulay, R ^a   Clei, A ^a  

^a ORANGE LABS   (France)

^b CNRS   (France)

Author keywords

Field effect transistors; Noise; Semiconductor devices and materials

Indexed keywords

BUFFER CIRCUITS; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE; SUBSTRATES; X RAY ANALYSIS;

GALLIUM ARSENIDE BUFFER THICKNESS; HETEROEPITAXIAL GROWTH; X RAY DIFFRACTION MEASUREMENTS;

MESFET DEVICES;

EID: 0027547787     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930257     Document Type: Article

References (8)

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