Temperature Dependence of FET Properties for Cr-Doped and LEC Semi-Insulating GaAs Substrates

IEEE Transactions on Electron Devices

Volumn 31, Issue 1, 1984, Pages 54-62

  Hickmott, Thomas W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0021191062     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21473     Document Type: Article

References (36)

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