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Volumn 37, Issue 12, 1989, Pages 2039-2045

A Large-Signal Physical Mesfet Model For Computer-Aided Design And Its Applications

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS, NONLINEAR--EQUIVALENT CIRCUITS; INTERMODULATION; MATHEMATICAL TECHNIQUES--HARMONIC ANALYSIS; SIGNAL DISTORTION--COMPUTER SIMULATION; TRANSISTORS, FIELD EFFECT--COMPUTER AIDED DESIGN;

EID: 0024878774     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.44119     Document Type: Article
Times cited : (28)

References (16)
  • 1
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    • Apr.
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    • Wada, T.1    Frey, J.2
  • 2
    • 0019607025 scopus 로고
    • A temperature model for the GaAs MESFET
    • W. R. Curtice and Y. Yun, “A temperature model for the GaAs MESFET,” IEEE Trans. Electron Devices. vol. ED-28, pp. 954–962, Aug. 1981.
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    • Curtice, W.R.1    Yun, Y.2
  • 3
    • 0020141359 scopus 로고
    • Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFETs.
    • R. K. Cook and J. Frey. “Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFETs.” IEEE Trans. Electron Devices. vol. ED-29, pp. 970–977, June.982.
    • (1982) IEEE Trans. Electron Devices. , vol.ED-29 , pp. 970-977
    • Cook, R.K.1    Frey, J.2
  • 4
    • 0020924780 scopus 로고
    • Large-signal model of GaAs MESFET operation
    • Dec.
    • C. M. Snowden, M. J. Howes, and D. V. Morgan, “Large-signal model of GaAs MESFET operation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1817–1824, Dec. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1817-1824
    • Snowden, C.M.1    Howes, M.J.2    Morgan, D.V.3
  • 5
    • 0023294219 scopus 로고
    • Two-Dimens:onal hot-electron models for short-gate-length GaAs MESFETs
    • Feb.
    • C. M. Snowden and D. Loret, “Two-Dimens:onal hot-electron models for short-gate-length GaAs MESFETs,” IEEE Trans. Electron Devices. vol. ED-34. pp. 212–223, Feb. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 212-223
    • Snowden, C.M.1    Loret, D.2
  • 6
    • 0014705867 scopus 로고
    • Transport equations for electrons in two-valley semiconductors
    • Jan.
    • K. Blotekjaer, “Transport equations for electrons in two-valley semiconductors.” IEEE Trans. Electron Devices. vol. ED-17, pp. Jan. 1970.
    • (1970) IEEE Trans. Electron Devices , vol.ED-17
    • Blotekjaer, K.1
  • 9
    • 0018879033 scopus 로고
    • Modelling of submicrometer gate field-effect transistor including effects of non-stationary electron dynamics.
    • B. Carnez. A. Cappy. A. Kaszynski, E. Constant. and G. Salmer. “Modelling of submicrometer gate field-effect transistor including effects of non-stationary electron dynamics.” J. Appl. Phys., vol. 51. pp. 784–790, 1980.
    • (1980) J. Appl. Phys. , vol.51 , pp. 784-790
    • Carnez, B.1    Cappy, A.2    Kaszynski, A.3    Constant, E.4    Salmer, G.5
  • 10
    • 0023346399 scopus 로고
    • Quasi-two-dimensional modeling of GaAs MESFETs
    • May
    • P. A. Sandborn, J. R. East, and G. I. Haddad, “Quasi-two-dimensional modeling of GaAs MESFETs” IEEE Trans. Electron Devices,” vol. ED-34, pp. 985–991. May 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 985-991
    • Sandborn, P.A.1    East, J.R.2    Haddad, G.I.3
  • 11
    • 84939399668 scopus 로고
    • Simulation and characterisation of GaAs MESFETs for power amplifier application
    • Ph.D. dissertation, University of Leeds, Leeds, U. K
    • M. Pierpoint, “Simulation and characterisation of GaAs MESFETs for power amplifier application,” Ph.D. dissertation, University of Leeds, Leeds, U. K., 1987.
    • (1987)
    • Pierpoint, M.1
  • 12
    • 0024138909 scopus 로고
    • Constant intermodulation lation loci measure for power devices using HP 8510 network analyser
    • (New York) June
    • L. Ricco, G. P. Locatelli, and F. Calzavara, “Constant intermodulation lation loci measure for power devices using HP8510 network analyser,” in 1988 IEEE MTT-S Int. Microwave Symp. Dig. (New York), June 1988, pp. 221–224.
    • (1988) 1988 IEEE MTT-S Int. Microwave Symp. Dig. , pp. 221-224
    • Ricco, L.1    Locatelli, G.P.2    Calzavara, F.3
  • 14
    • 0023961709 scopus 로고
    • State of the art and present trends in nonlinear microwave CAD techniques
    • Feb.
    • V. Rizzoli and A. Neri, “State of the art and present trends in nonlinear microwave CAD techniques,” IEEE Trans. Microwave Theory Tech. vol. 36, pp. 343–365, Feb. 1988.
    • (1988) IEEE Trans. Microwave Theory Tech , vol.36 , pp. 343-365
    • Rizzoli, V.1    Neri, A.2
  • 15
    • 0020824342 scopus 로고
    • Numerical steady-state analysis of nonlinear microwave circuits with periodic excitation
    • Sept.
    • C. Camacho-Penalosa, “Numerical steady-state analysis of nonlinear microwave circuits with periodic excitation,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 724–730. Sept. 1983
    • (1983) IEEE Trans. Microwave Theory Tech. , vol.MTT-31 , pp. 724-730
    • Camacho-Penalosa, C.1
  • 16
    • 0022789958 scopus 로고
    • Frequency domain continuation method for the analysis and stability investigation of nonlinear microwave circuits
    • Oct.
    • D. Hente and R. H. Jansen, “Frequency domain continuation method for the analysis and stability investigation of nonlinear microwave circuits,” Proc. Inst. Elec. Eng. vol. 133, pt. H. pp. 351–362, Oct. 1986.
    • (1986) Proc. Inst. Elec. Eng. , vol.133 , pp. 351-362
    • Hente, D.1    Jansen, R.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.